First of all, infrared thermal imaging function is a conductive material between conductor and insulator at room temperature. From the point of view of science and technology, infrared thermal induction imaging function is a material that can control the conduction from insulator to conductor. With the development of economy, the function of infrared thermal imaging affects people's daily work and life. It was not until the 1930 s that these materials were recognized by the academic community. Common semiconductor materials include silicon, zirconium, gallium, etc. Silicon is one of the most important semiconductor materials.

The second is the optical effect. The optical effect of semiconductor materials is the basic principle of solar cells. At present, the application of semiconductor materials has become a hot spot, which is the fastest growing material and the best clean energy market in the world. The main material of solar cells is semiconductor material, which is the main criterion to judge the conversion rate quality of solar photovoltaic cells. Solar cell with high photoelectric conversion rate and high working efficiency. According to various semiconductor materials used, solar cells are divided into silicon crystal solar cells, thin cells and third to fifth battery complexes.

In addition, the principle is that after switching power supply, the connected separator moves forward. In the frame where the electric field moves forward, most of the motion of the transmitter (electrons) diffuses to the emission of the enhanced region. Therefore, electrons in the discharge region can easily pass through the discharge separator in the core region of the external electric field working frame, thus forming an electron flow. (Please note that the current trend is opposite to the direction of electronic movement. Of course, most of the carriers (holes) at the bottom of this region will flow to the discharge region under the action of external electric field, forming the current IEP holes. This is because the impurity concentration at the bottom of this region is lower than the electron flow discharged in this region.

As we all know, DC voltage is applied to the PN junction of semiconductor, and F-type holes move to N-type region, and N-type electrons move to F-type region. When electrons and holes are enslaved nearby, there is energy corresponding to a semiconductor with a beam gap from the intersection of the PN interface. By using semiconductors with large beam gaps, high energy, such as visible light, can be obtained from light. Low-energy light, such as infrared radiation, can be obtained by modern semiconductors with a small width.