In terms of works, * * * has published more than 200 academic papers and 4 works, and won 8 provincial and ministerial awards such as the second prize of scientific and technological progress of the Ministry of Information Industry and the award of outstanding young teachers of the Ministry of Education.
Since 1993 entered the postdoctoral station, Comrade Zhang Xing has successively presided over more than ten scientific research projects such as the National Major Basic Research Program (973), 863, National Natural Science Foundation, national key scientific and technological research, international cooperation, etc., and all of them have successfully completed their tasks, with the total scientific research funds reaching tens of millions of yuan. During this period, he mainly devoted himself to the research of small-size MOS devices, CMOS technology and SOI technology, and achieved a series of innovative scientific research achievements, including:
(1) The influence of COSI 2 gate on the radiation characteristics of the device is studied comprehensively, and it is concluded for the first time that using COSI 2 self-aligned gate can improve the total dose radiation resistance of the device.
(2) A series of deep submicron SOI device models and CMOS/SOI circuit simulation software have been developed, and the simulation of deep submicron CMOS/SOI circuit has been realized for the first time in China. The software has been sold to City University of Hong Kong, Aerospace Science and Technology Group and other units. (3) A new trench SOI device with a trench length of 0. 15mm was developed for the first time in China. (4) A new structure of SOI annealing propulsion gate-controlled hybrid tube (DGCHT) was proposed and developed, which improved the problems of low breakdown voltage and large early effect of GCHT, and obtained the invention patent. (5) A 5 1 class CMOS/SOI ring oscillator circuit is developed, and the gate delay time is 55ps, which is the highest level in China at present. (6) The concise relationship between sputtering yield and implantation energy in the process of high dose oxygen ion implantation is put forward for the first time, and the fast and accurate SIMOX thickness calculation program POISS is completed. (7) Developed a complete set of anti-radiation CMOS/SOI technology, which has been transferred to 47 institutes of the Ministry of Information Industry and Beijing Yuxiang Electronics Co., Ltd. (8) Anti-radiation CMOS/SOI ASIC has been applied to China Academy of Engineering Physics and Aerospace Industry Group.
* * * Published 2 books and more than 20 academic papers/kloc-0; Won the second prize of scientific and technological progress of the Ministry of Information Industry, the National Science and Technology Major Achievement Award and other 7 awards; Obtained 1 invention patents. In teaching, opening a basic course "Introduction to Microelectronics" for undergraduates and a postgraduate course can organically integrate the latest scientific research achievements and progress at home and abroad into classroom teaching, which has been well received by students.