In the early 1970s, Zou Shichang, who was criticized by the Cultural Revolution, returned to his research post. At this time, his research field has shifted to the study of the interaction between ion beam and solid materials and its application in semiconductor materials and devices. At that time, the "Cultural Revolution" was still going on. The equipment available at that time was the first ion implanter with energy of 200,000 electron volts in China, and its performance was very unstable. Zou Shichang first participated in the later stage of threshold voltage control of CMOS integrated circuits (electronic watch frequency divider), which is the first time that ion implantation has been applied to semiconductor integrated circuits in China. 1974 In cooperation with Shanghai Nuclear Research Institute, a beam collimator and a precision goniometer were installed on the ion implanter, and a system for measuring backscattering energy spectrum and analyzing channel effect was established, which was applied to the determination of concentration distribution of surface components of ion implanted semiconductors, the analysis of lattice damage and the lattice position of doped atoms. 1975 completed the research work of neon ion back implantation to absorb heavy impurities in silicon and improve the reverse leakage characteristics of pn junction. In September of the same year, Zou Shichang published this paper at the international academic conference of "Ion Beam Surface Analysis" in Karlsruhe, West Germany, which attracted the praise of international colleagues. To their surprise, China has experimented with more than one million electron volts of energy accelerators and precision instruments in the world. This is the first paper published by China in international academic circles to study semiconductors by using ion backscattering energy spectrum analysis. 1978 cooperated with Shanghai Institute of Optics and Mechanics, and took the lead in developing the research work of semiconductor laser annealing in China. On the basis of the above technology, the ion beam laboratory led by Zou Shichang systematically studied the interaction between ion beam and solid materials, and applied it to the modification, synthesis, processing and analysis of materials, and successively completed the following research work. (1) semiconductor ion implantation: The damage and annealing behavior of ion implanted silicon are studied, and a new method of annealing and alloying of ion implanted semiconductor irradiated by back carbon dioxide laser is creatively proposed. This work won the second prize 1982, a major scientific and technological achievement of China Academy of Sciences. The highest carrier concentration and doping electrical activation rate in indium phosphide were obtained by double ion implantation, and the first 120 gate GaAs gate array circuit and high-speed frequency divider in China were developed by full ion implantation technology, which won the first prize of China Academy of Sciences 1990 for scientific and technological progress.

(2)SOI technology: The SOI technology was studied systematically, and new SOI materials were synthesized by ion implantation and laser recrystallization. Solved the surface quality problem of laser recrystallization SOI material suitable for making circuits, and obtained the invention patent. Based on the in-depth analysis of the optical effects of SOI materials, a set of nondestructive characterization techniques is proposed, and a new CMOS/SOI circuit is successfully developed. This project won the second prize of Natural Science Award of China Academy of Sciences 1990. In recent years, SOI materials have been put into practical application, and will become the basic technology of 2 1 century silicon integrated circuits, which shows that Zou Shichang has a far-sighted vision in this new research field.

(3) Ion beam micromachining: The physical phenomena such as sputtering, damage and morphological changes caused by low-energy ion beam bombardment on the material surface are studied, and the first batch of practical blazed holographic gratings in China are etched on the timely substrate by reactive ion beam micromachining. The irradiation angle is controllable, the repetition process is stable, and the diffraction efficiency is greatly improved. This is a major breakthrough in grating manufacturing technology and won the second prize of China Academy of Sciences 1989 National Science and Technology Progress Award 1987.

(4) Ion beam enhanced deposition: responsible for the national "863 high-tech material field material surface optimization" project, established and mastered the controllable, preset and repeatable ion beam enhanced deposition technology, and synthesized silicon nitride and titanium nitride films with strong adhesion to the substrate, low friction coefficient and high wear resistance.

Because of these achievements, Zou Shichang was elected as a member of the international committee of two major international academic conferences in the field of ion beam (ion implantation technology -IIT and ion beam material modification -IBMM). 1989 was awarded as a model worker in Shanghai.