When he graduated from primary school, his grades were among the best. In wartime, it is extremely difficult to fight life. He also wants to stop attending regular schools and find a way out early. However, due to his bumpy career, his father insisted that he continue to study, study science and technology and do practical things for the country. In addition, he has been studying in a national middle school, including living expenses at public expense, so he has never stopped studying.
The biggest influence of his family is that knowledge must be acquired by oneself. In the second year after the victory of the Anti-Japanese War, when he transferred from the mainland to Ye Jing Middle School, many lessons were difficult. But one day Mr. Ju Xiaoshi, who teaches physics, suddenly said to the whole class, "You should all learn from Chen Xingbi. He obviously did all his exercises by himself. Whether he is doing something wrong or doing it right, he has his own special method, and the better he does, the better. " He also encouraged Chen Xingbi to be an honest man all his life. These words of the teacher have benefited Chen Xingbi for life.
1947 was admitted to the Department of Electrical Engineering of Tongji University and won a scholarship. He never sticks to a pattern in his research. People are in the department of electricity, but they take classes in the department of physics and machinery, while engineering mechanics and descriptive geometry are better than the main courses in the department of electricity. He has studied the violin and can recite many classical symphonies. He also read books on idealistic philosophy, which made him accept materialism after a hard ideological struggle after the founding of New China. He told others that he thought his materialistic thought was relatively solid, because it was gained through struggle.
1952 graduated from electrical engineering department of Tongji University. Professor, University of Electronic Science and Technology of China.
1952 After graduating from university, he was assigned to the Department of Electrical Engineering of Xiamen University as a teaching assistant. In the second year, in case of the second adjustment of departments, I was transferred to the Radio Department of Nanjing Institute of Technology. There, he tutored the basic courses of electrical engineering for several years.
1956 The CPC Central Committee calls for marching into science. At that time, he was assigned to work in the newly established Chengdu Institute of Telecommunications Engineering (referred to as "Chengdian", now University of Electronic Science and Technology of China), which also gave him the opportunity to learn new subjects. He chose to study semiconductors at the Institute of Applied Physics of China Academy of Sciences. This decision determines his future development direction. During his two and a half years in the institute, while working, he taught himself specialized courses from the four major mechanics of physics department to semiconductors, and wrote a paper on storing time in drift transistors that only appeared at that time. This article later appeared in the references written by prichard, which shows that it is the earliest work in this field.
1959, back to Chengdian. Before the reform and opening up, he was always ordered to teach because of his family background. In his view, to teach a book well, we should not only integrate what we have taught, but also consider how to make students accept it best. He even has to think for a long time before he can say a sentence or a paragraph. Therefore, he doesn't need lecture notes in class, just take a piece of paper the size of a cigarette box and write a little memorandum outline. His teaching is highly praised by the students. Teaching has also laid a better scientific foundation for myself.
1970, he was sent to the factory to support the development of lead oxide camera tube. He learned that silicon target camera tube had been developed abroad, and suggested that this new camera tube be developed and approved by the Fourth Machinery Department. But it didn't last long. It was only when he first saw that the picture tube could produce images that he was named by the first batch to work in the May 7th Cadre School until his wife was transferred back when she became ill.
1980, was sent to Ohio University as a visiting scholar, and his major did not match. 198 1 At the beginning of the year, he moved to the University of California, Berkeley, and began to study new semiconductor power devices. 1983 after returning to China, he was elected as the head of the department and soon established the Institute of Microelectronics. For the needs of the country and units, he completely gave up the idea of engaging in basic physics and took MOS power devices as his main research direction. Under his leadership, devices such as VDMOST, IGBT, LDMOST, MCT and EST were first developed in China, and related technologies were also developed.
1980 Visiting scholar at Ohio University.
198 1 visiting scholar and research engineer at the university of California, Berkeley.
1983 Director of Microelectronics Science and Engineering Department and Director of Microelectronics Research Institute, University of Electronic Science and Technology of China. He was hired as a visiting professor in the Department of Electrical Engineering at the University of Toronto in Canada and a senior visiting professor at the University of Wales at Swan Sea in the United Kingdom.
1993, engaged in power integrated circuit research. 10 years ago, it was suggested that making semiconductor microelectronic circuits and power devices on one chip at the same time would bring benefits of easy realization of various protection and control. Because nearly three-quarters of the world's electric energy can only be used by converting it into its form through semiconductor power devices, some people abroad predict that it will cause the so-called "second electronic revolution" on a chip. As important as the arrival of the information age caused by the development of integrated circuits, it is also called the first electronic revolution. However, the power integrated circuits manufactured in the world adopt complex processes, and their electrical properties are not good enough, which leads to very low cost performance, so the progress of the second electronic revolution is very slow. His new invention of two surface withstand voltage layer structures solved the problem of making power devices on ordinary integrated circuits. Not only the process of making power devices is completely compatible with ordinary integrated circuits, but also the electrical properties of the power devices are particularly excellent, and the shackles that hinder the rapid development of the second electronic revolution will also be broken. His greatest hope is that this achievement will bear fruit in China and make China a world leader in this field.
1999 was elected as an academician of China Academy of Sciences. From May 10 to May 14, the 27th International Conference on Power Semiconductor Devices and Integrated Circuits (IEEE ISPSD 20 15) was held in Hongkong, China. Academician Chen Xingbi of our school won the highest honor "International Pioneer Award for Power Semiconductor" (ISPSD 20 15) for his outstanding contribution to the theory and design of high-voltage power MOSFET, and became the first scientist in the Asia-Pacific region to win this honor.
At the end of 1950s, the storage time of drift transistors was systematically analyzed for the first time in the world. A new basic equation of charge method and mirror image charge equation in inhomogeneous media are proposed. Since 1980s, he has been engaged in the theoretical and structural innovation research of semiconductor power electronic devices. The terminal technical problem of improving the breakdown voltage of p- n junction by planar and non-planar processes is solved theoretically, and some unique theoretical analysis solutions have been made so far. A series of important contributions have been made to solve the contradiction between reducing on-resistance and improving withstand voltage in MOS power tubes. Three new structures of withstand voltage layer were invented, which improved the comprehensive performance of power devices. The new structure of lateral withstand voltage layer is compatible with conventional CMOS and BiCMOS processes in preparation process, which is beneficial to the development of high voltage resistant power integrated circuits. 1999 was elected as an academician of China Academy of Sciences.