In this paper, the interface characteristics of strained silicon MOS are studied.
Based on the device structure of strained silicon MOS surface channel, the models of gate voltage and reverse layer minority carrier concentration are established. Through the analysis of this model, the capacitance-voltage characteristics of strained silicon MOS are studied. The results show that the energy band difference between strained silicon and relaxed silicon-germanium heterojunction will limit the formation of electrons and holes. At room temperature, the C-V curve of strained silicon MOS has a step phenomenon in the depletion region or inversion region. This step changes with respect to the epitaxial layer doping concentration of strained Si/relaxed SiGe.
According to the results of high frequency C-V experiments, the interface charge of strained Si/SiO2 _ 2 system and its influence on the interface characteristics are discussed. Finally, the density of states at the strained Si/SiO2 _ 2 interface is measured and calculated by improving and modifying the measurement method of bulk silicon MOS high frequency capacitance.
According to the device physics, the semi-empirical model of electron mobility in the inversion channel of strained silicon n-MOSFET is proposed. The model considers the influence of scattering factors (such as lattice, ionized impurities, surface phonons, interface charges and interface roughness) on channel mobility, and also includes the shielding effect of anti-electrons. Finally, the MATLAB simulation is carried out, and the simulation results are completely consistent with the experiments.