Based on the preliminary study of gallium oxide heterojunction, Long Shibing's research group successfully applied the heterojunction terminal extension structure to gallium oxide Schottky diode. In this study, the charge concentration in JTE region is optimized through reasonable design to ensure that the forward characteristics of the diode are not affected, and the Schottky fringe electric field is weakened to the maximum extent, thus effectively improving the withstand voltage of the device.
Hao Yue, an academician of China Academy of Sciences, said that gallium oxide is one of the most likely luminescent materials in the future. In the next 65,438+00 years, gallium oxide devices may become competitive power electronic devices and will directly compete with silicon carbide devices. It is generally believed in the industry that gallium oxide is expected to replace silicon carbide and gallium nitride and become the representative of a new generation of semiconductor materials. At present, semiconductor enterprises all over the world are scrambling for layout, and gallium oxide is gradually becoming a rising star in Ran Ran.
The published data show that gallium oxide has excellent physical properties, such as ultra-wide band gap (4.2-4.9eV), ultra-high critical breakdown field strength (8MV/cm), ultra-high transparent conductivity and so on. The conductivity is about 10 times that of silicon carbide, and the theoretical breakdown field strength is about 3 times that of silicon carbide, which can effectively reduce energy consumption in new energy vehicles, rail transit, renewable energy power generation and other fields.
According to the forecast of NCT, by 2030, the market size of gallium oxide wafers will reach about 59 billion yen (about 420 million US dollars). According to statistics, by 2030, the market size of gallium oxide power semiconductor will reach 654.38+0.5 billion US dollars.
At present, Japan's NCT company occupies more than 90% of the global market share in the supply of gallium oxide single crystal substrates. There are many institutions and universities studying gallium oxide in China, and many research results have been achieved. It is expected that the scientific and technological achievements will be transferred after the application scenarios and requirements become clear.
According to the incomplete statistics of Cailian, since the beginning of this year, a number of listed companies have disclosed the research and development of gallium oxide-related businesses in interactive exchanges, including AVIC, Xinhu Treasure, Sinosteel International, Xiaolan Technology, Nanda Radio and Television, Ashchuang and so on. , as follows:
In addition, Xidian Power, a subsidiary of china xd, holds shares in Shaanxi Semiconductor Pilot Technology Center, which has transformed innovative scientific research achievements such as gallium oxide, diamond semiconductor, graphene, AIN and compound integrated circuits.
But it is worth noting that analysts say that at present, about 80% of research institutions are working hard in the direction of power devices. However, because gallium oxide material is suitable for high-power field, it means that its downstream application can not start from consumer electronics, but needs to be gradually introduced from industrial field, new energy vehicles and other fields, so the downstream application of gallium oxide still needs time.