1986 obtained a bachelor of science degree in semiconductor physics and device physics from the semiconductor department of Jilin university, and 1989 obtained a master of science degree in the same major; In the same year, he entered Changchun Institute of Physics, China Academy of Sciences, engaged in MOCVD growth research and device research of III-V semiconductor materials, and 1999 received a doctorate in condensed matter physics from Changchun Institute of Physics, China Academy of Sciences. 1999-2000 was awarded a Royal Fellow by the Royal Society, and worked as a postdoctoral fellow in the Department of Physics, Oxford University, UK, engaged in MOCVD growth research and photoelectric characteristics research of low-dimensional structure of mid-infrared antimonide semiconductor materials; From 200/kloc-0 to 2003, he was engaged in MOCVD growth and device research of high-power semiconductor quantum well laser array structure at Nanyang Technological University in Singapore. In September 2003, I worked in the School of Electronic Science and Engineering of Jilin University.