1955- 1956, senior engineer, Sylvia company.
1957- 1960, Institute of Physics, Chinese Academy of Sciences, researcher.
1960-, researcher, Institute of Semiconductors, Chinese Academy of Sciences 1980-, vice chairman of China Association for Science and Technology.
1978- 1985, chairman of China electronic materials industry association.
1986-, member of National Natural Science Foundation.
Professional fields: semiconductor materials, semiconductor material physics 1959- 1964, crystal growth of Czochralski silicon and zone melting silicon, and presiding.
1977- 1980, growth of high purity VPE and LPE GaAs epitaxial materials, presided over.
1985- 1990, growth of LCS silicon GaAs crystal, presided over.
1987- 1994, growth and properties of space GaAs materials, presided over the research on 198 1 4K and 16K silicon DRAM and the improvement of yield, and won the first prize of China Academy of Sciences for scientific and technological progress.
1982, growth and properties of high purity LPE GaAs, journal of crystal growth,
1989, preparation and properties of space GaAs, selected materials science,
1993, Selected Papers of Lin Lanying, Fujian Science and Technology Publishing House,
198905, Growth and properties of GaAs in space, China Academy of Sciences, first prize of scientific and technological progress.
198605, Research on Quality Improvement of GaAs Materials, Second Prize of Scientific and Technological Progress of State Science and Technology Commission.