Ferroelectric memory (FERAM) is a non-volatile memory that uses ferroelectric effect to store data. In ferroelectric materials, the electric field can change the structure of the material and can be used to store binary data. When an electric field is applied to a ferroelectric material, it will be polarized, and this polarization can be maintained for a long time, so the ferroelectric memory is non-volatile. This kind of memory has high speed and low energy consumption, but it has not been widely used at present.