Silicon carbide one-dimensional nano-materials have more unique excellent properties and broader application prospects because of their micro-morphology and crystal structure, and are generally considered as an important part of the third generation of wide band gap semiconductor materials.

The third generation semiconductor materials are wide band gap semiconductor materials, also known as high temperature semiconductor materials, mainly including silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond and so on. This kind of material has the characteristics of wide band gap, high thermal conductivity, high breakdown electric field, high radiation resistance and high electron saturation rate, and is suitable for manufacturing high temperature, high frequency, radiation resistance and high power devices. The third generation of semiconductor materials has a very broad application prospect in the future because of its excellent characteristics.