195 1 Graduated from Physics Department of Zhejiang University.

1958 obtained an associate doctorate in physics-mathematics from Leningrad University in the Soviet Union. Professor Tsinghua University.

In the early 1950s, in the study of photoconductivity and photoelectric mechanism of semiconductor thin films, the theory of electron grain boundary was put forward, and a PbS infrared detector with high signal-to-noise ratio was developed.

Ultra-high purity polysilicon developed from 65438 to 0959.

Engaged in the research of silicon devices in 1960s, in which the achievements of planar silicon technology and high-frequency silicon triode promoted the related research and production in China.

After 1977, he mainly engaged in the research of large-scale and ultra-large-scale integration technology and device physics, led, guided and directly participated in the development of various ultra-large-scale integrated circuit chips such as static memory, 8-bit, 16-bit high-speed microprocessor, EEPROM and 1 mega-Chinese character ROM, and achieved success. At the same time, a complete set of technology of 3 micron and 1 micron has been developed.

Guide and invent semiconductor infrared high-speed annealing technology and equipment. Recent research includes: system-on-chip integration and MEMS technology. 199 1 was elected as an academician of China Academy of Sciences.

20 1 1 died in the early morning of may 2.