research contents
Research scope: research on power semiconductor devices and devices.
Promotion technology and projects: 4-inch ultra-high power fast thyristor; 5-inch high-power thyristor.
Subject classification: electronics, communication and automatic control technology; Electric power and electrical engineering
Scientific research ability
Number of employees: 740
Technician: 375 people
Institutional category: provincial and municipal systems
Superior competent unit: Provincial Science and Technology Department
Date of establishment: 1966
Main researchers:
Name of internal organization: First Laboratory, Second Laboratory, Third Laboratory, Fourth Laboratory, National Engineering Research Center, National Quality Inspection Center, Industry Standards Room,
Names of subordinate institutions: Xi Anqiandao Industrial Co., Ltd., Xi Anyili Power Electronics Co., Ltd., Xi An Ai Paike Power Electronics Co., Ltd. and Xi An Xi Pu Power Electronics Co., Ltd.
Publication: quarterly journal of power electronics technology
Production products: KS bidirectional thyristor; Ultra-high power thyristor; High-power thyristor; High-power GTO components; High power rectifier tube; High-voltage electron beam bombardment furnace power supply; Fast recovery diode; Quickly turn on the thyristor; Pulse electroplating power supply; KK fast thyristor; Rectifier power supply for high voltage plasma wind tunnel
Scientific research achievements: research on packaging technology of LGBT module; Insulated gate bipolar transistor IGBT module: small-scale photo-controlled thyristor DV/DT test bench; Research on MJ-ⅱ/50 semi-automatic angular grinder technology and equipment: GTR module structure and sealing technology: GTO application basic technology research: thyristor comprehensive characteristics test bench; GTR module testing technology and equipment; Chopping voltage regulating system for subway train: KK2000A/ 1600V ultra-high power fast thyristor; 12KV 1500A high voltage thyristor module; Neutron transmutation doped Czochralski silicon for power devices and its application: 77MM series high-power low-loss thyristors: ultra-high-power thyristors with diameter 100MM; High-power GTO components for urban rail transit vehicles: KHS high-current rectifier: research on anode short-circuit turn-off thyristor: light-controlled thyristor can originate; Φ100mm3000a/5500v super-power thyristor; Research on IGBT test technology: KDH-Ⅱ 3000 kW power recovery device: 600A, 1000 ~ 1800v high-power GTO thyristor; Φ1.25mm ultra-high power thyristor for DC transmission in Three Gorges: High-capacity high-frequency IGBT module; Sealing technology of IGBT devices: GTO component and assembly conversion time test bench: test technology and equipment for GTR module, GTO module and application module; 300MW turbo-generator rotary excitation rectifier unit: asymmetrical thyristor ASCR500A/2000V: Research on high-power GTO components: Microcomputer control of main drive thyristor of medium plate reversible rolling mill: high-voltage and high-current fast thyristor KK 1000A/2000V Research: Development of high-frequency thyristor: rectifier power supply for KHS, ZHS electrometallurgy and electrochemistry; Research on high voltage, high current and high reliability thyristor: 100KV Zhoushan DC power transmission and transformation complete equipment; Research on Test Method of Steady Thermal Resistance and Transient Thermal Resistance of Thyristors and Development of Test Equipment
Patents: new technology of expanding gold for manufacturing fast thyristors; Sealed excitation power cabinet with bridge arm assembly structure
Awards: ministerial awards; Provincial prize; National award; Ministerial awards; Provincial prize; state award (of honour)
Research results (***7 1, of which 10 is as follows)
￠77mm thyristor element
Localization of Ultra-high Voltage and High Power Thyristors (Third Prize of China Machinery Industry Science and Technology Award)
4in Super Power Fast Thyristor (Second Prize of China Machinery Industry Science and Technology Award)
High-power electrolytic rectifier power supply
GTO GTR application circuit module
GTR GTO applies * * * basic technology.
Manufacture and technology of IGBT devices
Computer aided design, manufacturing and testing technology of MCT
Insulated gate bipolar transistor IGBT module
Rectifier power supply for KHS, ZHS electrometallurgy and electrochemistry
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Patent application (***3 items, of which 10 is as follows)
Sealed excitation power cabinet of bridge arm assembly structure (application number: 97239564.4)
A new method for recovering molybdenum flake is put forward: 88 103038.4).
A new process of expanding gold for manufacturing fast thyristor (application number: 86 1024 17)
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Published journal papers (***4 1, where 10 is shown in the figure below).
Application Prospect of Valve Assembly in Power System (Power Equipment 2006(7))
Development of ZK 1 150/4500 Fast Recovery Diode Guo Yongzhong (Power Electronics Technology 2006(5))
Transformation of 60 t imported DC electric arc furnace power supply (industrial heating 2006( 1))
Development of Ф100 Fast Thyristor (Power Electronics Technology 2005(5))
X-ray Diffraction Analysis of the Influence of Heat Treatment Temperature on the Structure and Conductivity of Ma Ying Transparent Conductive Film (China chinese journal of liquid crystals and displays Journal 2005(4))
Design of Cooling System for High Voltage Inverter Wang Dan (Power Electronics Technology 2005(2))
IEC and Trend of Domestic Standards of AC Drive System Jin Donghai (Power Electronics Technology 2005(2))
On-line control of minority carrier lifetime of ultra-high power thyristors for DC transmission Li Jianhua (Power Electronics Technology 2005( 1))
Electric Arc Furnace and Zhang Dianjun Power Grid (Industrial Heating 2004(5))
Simulation Research on Direct Torque Control of Huang Xiaodong Asynchronous Motor with Resonant Extremely Soft-switching Inverter (Journal of Xi University of Technology 2004(3))
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Published academic conference papers (*** 19, of which 19 is shown in the figure below).
Development Status of Power Electronic Devices at Home and Abroad (2004 National Symposium on Reactive Power and Voltage Technology of Power Grid (2004- 10- 1))
Thyristor Intelligent Module (8th Annual Meeting of Power Electronics Society of China Institute of Electrician (2002-1-1))
10kV thyristor valve assembly with heat pipe structure (8th Annual Meeting of Power Electronics Society of China Institute of Electrician (2002-1-1))
Influence of load change of PRC circuit on switching state of inverter (8th annual meeting of Power Electronics Society of China Institute of Electrical Technology (2002-1-1))
Three Gorges Project and HVDC Transmission (8th Annual Meeting of Power Electronics Society of China Institute of Electrician (2002-1-1))
Present situation and development direction of power electronics integration technology (eighth annual meeting of power electronics society of China Institute of Electrician (2002-1-1))
Proton irradiation is used to improve the characteristics of high-power fast thyristors (8th Annual Meeting of Power Electronics Society of China Institute of Electrotechnics (2002-1-1))
Summary of operation of 40,000 t/a ion-exchange membrane rectifier (20th national chlor-alkali industrial technology annual meeting (2002-9- 1))
Simulation of Permanent Magnet Synchronous Motor Control System Based on Space Voltage Vector (7th China Power Electronics and Drive Control Conference (200 1-7- 1))
Φ100 mm thyristor giant excitation power cabinet for heat pipe heat dissipation (CSEE China Electrical Engineering Society Large Motor Professional Committee 200 1 annual excitation seminar (200 1-5))
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Drawing standard (***6 1, where 10 is shown below)
Semiconductor devices-Discrete devices-Part 6: Thyristors-Part 3: Blank detail specification for reverse blocking triode thyristors with rated environment and package current greater than 100A (standard number: GB/T13151-2005).
Blank detail specification for bidirectional triode thyristor with discrete device current greater than 100A, rated environment and package (standardNo.: GB/T 13 150-2005)
Connector for power semiconductor devices (standard number: JB/T 5843-2005)
Door assembly for power semiconductor devices (standard number: JB/T 5835-2005)
Power semiconductor device chip positioning ring (standard number: JB/T 5842-2005)
Power semiconductor device shell porcelain (standard number: JB/T 1050 1-2005)
Performance characteristics of low-voltage DC power supply equipment (standard number: GB/T 17478-2004)
Semiconductor self-rectifying converter including direct DC converter (standard number: GB/T 3859.4-2004)
Electrotechnical terminology-Technical standard number of power electronics: GB/T 2900.33-2004
Radiators for power semiconductor devices Part 1: Casting series (standard number: GB/T 8446. 1-2004)
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Media news (***6 articles, of which 10 is shown below)
How far is it from complete localization of DC equipment?
Large-scale clean and efficient power generation equipment is listed as the key development object (2006-6-2 1)
Zeng: Revitalizing the overall situation of modernization of equipment manufacturing industry (June 20, 2006)
The State Council Conference on Revitalizing Equipment Manufacturing Industry was held (June 20, 2006)
Detailed Rules for Revision of Production License for Power Electronics Industry (2003-4- 16)
Xi 'an Institute of Power Electronics Technology climbs the peak of science and technology (April 9, 2003)
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contact information
Organization name: Xi 'an Institute of Power Electronics Technology
Formerly known as Xi 'an Rectifier Research Institute, Ministry of Machinery Industry.
Person in charge: Lu Position: Director Title: Senior Engineer, Professor
Address: No.94, Zhuque Street, Xi, Shaanxi Province (7 1006 1)
Tel: (029) 8527 17 17 (office), 8527 1888, 8527 1829 (department).
Chuan Zhen: (029) 8526 169 1
E-mail :peri@chinaperi.com; xwangi@pop3.irf.com
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