Academician Liang,/kloc-0 was born in Wuhan, Hubei Province in September, 1933./kloc-0 was elected as an academician of China Academy of Engineering in June, 1997. He has successively won the second prize for scientific and technological achievements of the State Science and Technology Commission, the second prize for new products 1 time, the third prize for national scientific and technological progress 1 time, the first prize for major achievements and scientific and technological progress of the Chinese Academy of Sciences for three times, the second prize for Shanghai scientific and technological progress 1 time, etc. Over 20 times.
Academician Liang has been engaged in the scientific research of semiconductor materials for more than 60 years and is the founder of early semiconductor silicon in China. In 1960s, the key technology of melting silicon in high purity region was solved. 1964 GaAs liquid phase epitaxial materials for room temperature lasers were prepared. 1979, a high-quality silicon zone melting single crystal with dislocation-free, vortex-free, low micro-defects, low carbon and controllable oxygen content for large-scale integrated circuits was successfully developed; In 1980s, nitrogen-doped neutrons were first used to transmute silicon single crystals, which solved the problems of integrity and uniformity of silicon wafers. In the early 1990s, we studied the growth of superlattice quantum well materials by MOCVD, which promoted the crystal integrity, electrical properties and superlattice structure control of China superlattice quantum well materials to a practical level. He also played an active role in the research and industrialization of polysilicon for solar cells.