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Looking for optoelectronic technology semiconductor or detector paper 1500 words
Semiconductor ray detector

At first, nuclear radiation was studied on crystals for about 20 years.

The existence of rays leads to conduction phenomenon. However, by

The measured amplitude is small, there is polarization phenomenon, and it lacks applicability.

For a long time, the use of crystals as particle detectors has been hindered.

Detector. In this period, the gas detector is like an ionization chamber.

Proportional counter and Geiger counter have been widely developed.

In 2008, Van Hilton first discussed this problem practically.

"Conduction Counter" in Crystal

Two electrodes are deposited on the substrate to form a solid ionization chamber. For integration

The carriers generated by ionized particles must be applied with voltage. many

People have done experiments with all kinds of crystals. Van Hilton and Hoff

Stadt studied the main characteristics of this detector and got a

The average energy required for an electron-hole pair to act on a ray.

And charge collection time. Seeing this kind of detector

There are a series of benefits. Because of its high stopping ability, people shoot particles.

The range of protons is small, and silicon can absorb protons, while

Protons have a range of 0 in air, producing a pair of charges.

Water currents need less energy than gas 10 times, and they are generating carriers.

There is a small statistical fluctuation in the number of gas counters, and it is louder than the sound of gas counters.

It should be soon. However, despite hofstadter's many experiments,

There are still some limitations in using this side detector, such as internal polarization effect.

The applied electric field can be reduced and carriers can be trapped, resulting in charge collection.

About deviation. To avoid trapping carriers, additional

A strong enough electric field. Therefore, in the diffusion of junctions, or metals.

Space charge regions are formed at semiconductor contacts. This area is called consumption.

All layers. It has the characteristic of not capturing carriers. Therefore, nuclear energy

After the radiation hits the region, electron hole carriers are generated.

Yes, it can move freely and quickly to the electrode and finally be collected.

Settings. The measured pulse height is proportional to the radiation in the depletion layer.

Energy loss. A device have such a depletion layer will be manufacture in that following steps.

Many years later, this is related to the manufacture of very pure and long-lived semiconductors.

It's related to materials.

Mike Kay is at Bell Telephone Lab, Raquel holloway.

Watt first developed this detector at Purdue University.

1920, michael kay detected "photon" with reverse biased germanium diode. a grain of

Son, and study the pulse height and applied bias.

Change. Soon after, Lake Holovitz and his colleagues measured.

Measuring diode. Yes ",particle knife.

The reaction of particles. Mike Kay also conducted a similar experiment.

Until the counting rate is reached, a pair of holes and a pair of electrons are generated.

The energy needed is soil. . Michael kay also pointed out that,

The bias voltage applied to the silicon germanium junction diode is close to the breakdown voltage.

When bombarded by particles, carriers multiply. Zaipu

Simon of the University of Dué noticed that gold and germanium were bombarded by particles.

Pulses generated when the electrode tube is used. On this basis, Meyer confirmed the pulse.

The pulse amplitude is proportional to the energy of particles emitted by human body, and the effective area is

Two "detectors, measuring. Particles, points.

The discrimination rate is. Ella Petean studied a junction diode.

The characteristics of the tube, Davis first prepared the gold-silicon surface barrier probe.

Detector.

Many years later, many people have done a lot of work and published papers.

A wide range of works. Walter et al. discussed the types of Au-Ge barrier.

The preparation and performance of the detector consists of "effective area"

Detector, detector, working in,

The particle resolution of the mainland is 0. Meyer completed a project.

Experimental particle explosion of a series of germanium and silicon surface barrier detectors

Strike. In some laboratories in the United Nations and Europe,

Prepare to study this kind of detector. In Washington, DC, Gettysburg,

The Ashville Conference published some results. Like a knot and noodles.

The influence of the electrical characteristics and surface state of the barrier detector is reduced.

Leakage current, pulse rise time and nuclear physics applications.

The development of this kind of detector is also closely related to the connected electronic equipment.

Relationship. Because, in order to avoid the detector output pulse height and

The applied bias voltage will vary, so charge sensitivity with capacitive feedback is required.

Amplifier. In addition, the amplitude of the detector output signal is very small, which will

Low noise preamplifier is needed to improve the signal-to-noise ratio. for

To meet the above two conditions, it is generally held by an electron tube or a transistor.

Herman amplifier, the line amplitude contribution is. In the use of the presence effect

After the transistor, the resolution is further improved.

In order to expand the application of this detector, it is necessary to improve its efficiency.

If electrons are absorbed, the volume needs to be thick silicon. adopt

The general process limits the effective thickness, using high resistance silicon and high reverse bias.

The obtain effective thickness is far from meeting that requirement. because

In this year, Pell put forward a new method, which is big.

Greatly promoted the development of this kind of detector. That is to say, in semiconductors.

Resistivity can be obtained by compensating acceptor impurities with donor impurities.

Very tall materials are not intrinsic semiconductors. Yinikeng

It is easy to ionize and its ion mobility is high, so it is chosen.

It is a donor impurity. The preparation process is roughly as follows: firstly,

He diffuses to the surface of silicon, forming a structure, plus anti-.

Biasing, heating and archiving

one

Sub-regions drift, forming

A structure in which the effective thickness can be achieved. This kind of detector

Electronic optical splitter and multichannel amplitude analyzer suitable for conversion.

Combined, we can study the short-lived emission, but its influence on gamma rays.

This rate is low because the atomic number of silicon is low. In order to overcome this

Point, with the method of file drift into germanium, the atomic number of germanium is

. In, Flack used the germanium port for the first time.

According to the Pell method, a semiconductor detector is made.

The drift length of the crane is, and the measured values are ""and ""

X-ray, get half peak width.

Until a few years ago, all detectors were flat.

Where the effective volume is affected by the cross-sectional area of the crystal as "

And the compensation thickness is limited to obtain a drift of about 1/4.

It takes several months to move, so the effective volume is greater than to.

"It's hard. In order to overcome this shortcoming, further development

A coaxial detector is developed. Year, made of high resolution.

Volume coaxial detector. After that, with electronic workers.

Industry development and rapid development. The effective volume can generally reach several tens.

",at most, more than one hundred", which is very suitable for a pat.

Detection of lines. After 2000, it was widely used in various departments.

In recent years, semiconductor detectors have been widely used in theoretical research and practical application.

There has been a great development in the use.